Molecular Beam Epitaxial Growth of High Power Quantum Dot Super-Luminecent Diodes-Reference-Cited by-同舟云学术

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Molecular Beam Epitaxial Growth of High Power Quantum Dot Super-Luminecent Diodes

Published:2007-04-24 Issue:4B Volume:46 Page:2418-2420
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ray Sumon K.,Liu Hui Y.,Choi Tom L.,Groom Kristian M.,Liew San L.,Hopkinson Mark,Hogg Richard A.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference9 articles.

1. High power broadband InGaAs∕GaAs quantum dot superluminescent diodes

2. High-Performance Quantum-Dot Superluminescent Diodes

3. Quantum dot superluminescent diodes emitting at 1.3 /spl mu/m

4. Broad-band superluminescent light-emitting diodes incorporating quantum dots in compositionally modulated quantum wells

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1. Power improvement in ridge bent waveguide superluminescent light-emitting diodes based on GaN quantum dots;Physica Scripta;2021-11-08

2. Raman scattering study on Sb spray InAs/GaAs quantum dot nanostructure systems;Nanoscale Research Letters;2015-04-29

3. Annealing of In0.45Ga0.55As/GaAs quantum dots overgrown with large monolayer (11 ML) coverage for applications in thermally stable optoelectronic devices;Solid State Communications;2011-10

4. An atomic scale study on the effect of Sb during capping of MBE grown III–V semiconductor QDs;Semiconductor Science and Technology;2011-04-08

5. Control of Strain in GaSbAs/InAs/GaAs Quantum Dots;Journal of Physics: Conference Series;2010-09-01

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