Impact of Residual Impurities on Annealing Properties of Vacancies in Electroplated Cu Studied Using Monoenergetic Positron Beams-Reference-Cited by-同舟云学术

Impact of Residual Impurities on Annealing Properties of Vacancies in Electroplated Cu Studied Using Monoenergetic Positron Beams

Published:2007-05-18 Issue:No. 20 Volume:46 Page:L483-L485
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Uedono Akira,Mori Kazuteru,Ito Kenichi,Imamizu Kentarou,Hachiya Takayo,Kamijo Hiroyuki,Hasunuma Masahiko,Kaneko Hisashi,Toyoda Hiroshi,Ohdaira Toshiyuki,Suzuki Ryouichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference10 articles.

1. Copper Metallization for High Performance Silicon Technology

2. Mechanisms for microstructure evolution in electroplated copper thin films near room temperature

3. Correlation of stress and texture evolution during self- and thermal annealing of electroplated Cu films

4. Isothermal stress relaxation in electroplated Cu films. I. Mass transport measurements

5. Vacancy-type defects in electroplated Cu films probed by using a monoenergetic positron beam

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