Highly Integrated Field Emitter Arrays Fabricated by Transfer Mold Technique-Reference-Cited by-同舟云学术

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Highly Integrated Field Emitter Arrays Fabricated by Transfer Mold Technique

Published:2003-06-15 Issue:Part 1, No. 6A Volume:42 Page:3611-3615
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nakamoto Masayuki,Fukuda Katsuyoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=6R/a=3611/pdf

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Distinguishing dislocation densities in intrinsic layers of pin diamond diodes using two photon-excited photoluminescence imaging;Diamond and Related Materials;2021-08

2. Analysis of the influence of nanofissure morphology on the performance of surface-conduction electron emitters;Journal of Micromechanics and Microengineering;2016-03-11

3. Bulk molybdenum field emitters by inductively coupled plasma etching;Physical Chemistry Chemical Physics;2016

4. Efficient field emission characteristics from a planar-gate surface-conduction electron source with ZnO emitters;Journal of Alloys and Compounds;2015-09

5. Efficient surface-conduction field emission electron sources from tin oxide film;Vacuum;2015-05

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