High-Rate Dry Etching of ZnO in BCl3/CH4/H2Plasmas-Reference-Cited by-同舟云学术

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High-Rate Dry Etching of ZnO in BCl3/CH4/H2Plasmas

Published:2003-05-15 Issue:Part 2, No. 5B Volume:42 Page:L535-L537
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Bae Jeong-Woon,Jeong Chang-Hyun,Kim Han-Ki,Kim Kyoung-Kook,Cho Nam-Gil,Seong Tae-Yeon,Park Seong-Ju,Adesida Ilesanmi,Yeom Geun-Young

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=5B/a=L535/pdf

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