Silicon Nitride Final Passivation for GaAs Metal Semi-Conductor Field Effect Transistors (MESFETs) Packaged in Plastic Mold-Reference-Cited by-同舟云学术

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Silicon Nitride Final Passivation for GaAs Metal Semi-Conductor Field Effect Transistors (MESFETs) Packaged in Plastic Mold

Published:2003-11 Issue:Part 2, No. 11B Volume:42 Page:L1391-L1393
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Saito Yoshihiro,Tosaka Yasuhiro,Nakajima Shigeru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=11B/a=L1391/pdf

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A thin film force sensor on AISI 5140 steel surface with multilayer SI3N4/AL2O3 film as insulation structure;Thin Solid Films;2023-06

2. The application of polyimide/silicon nitride dual passivation to AlxGa1−xN/GaN high electron mobility transistors;Microelectronics Reliability;2008-02

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