High-Indium-Content InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes-Reference-Cited by-同舟云学术

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High-Indium-Content InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

Published:2003-04-30 Issue:Part 1, No. 4B Volume:42 Page:2281-2283
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chen Chin-Hsiang,Chang Shoou-Jinn,Su Yan-Kuin

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=4S/a=2281/pdf

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. UV–visible dual-band photodetector based on an all-inorganic Mn-doped CsPbCl3/GaN type-II heterojunction;Applied Physics Letters;2023-12-04

2. Dual-wavelength photodetector based on layered WSe2/n-GaN van der Waals heterostructure;Materials Today Nano;2023-03

3. Monolithic Multi‐Color Tunable Inorganic Light‐Emitting Diodes;Advanced Electronic Materials;2021-08-14

4. The effect of Multi Quantum Well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance;Materials Science in Semiconductor Processing;2021-01

5. High-Brightness InGaN/GaN Micro-LEDs With Secondary Peak Effect for Displays;IEEE Electron Device Letters;2020-09

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