Structure and Properties of Silicon Thin Films Deposited at Low Substrate Temperatures-Reference-Cited by-同舟云学术

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Structure and Properties of Silicon Thin Films Deposited at Low Substrate Temperatures

Published:2003-08-15 Issue:Part 2, No. 8B Volume:42 Page:L987-L989
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fejfar Antonín,Mates Tomá\vs,Fojtík Petr,Ledinský Martin,Luterová Kate\vrina,Stuchlíková Ha,Pelant Ivan,Ko\vcka Jan,Baumruk Vladimír,Macková Anna,Ito Manabu,Ro Kazuyoshi,Uyama Haruo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=8B/a=L987/pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structure of mixed-phase Si films studied by C-AFM and X-TEM;Journal of Physics: Conference Series;2007-04-01

2. Detailed structural study of low temperature mixed-phase Si films by X-TEM and ambient conductive AFM;Journal of Non-Crystalline Solids;2006-06

3. Characterization of grain growth, nature and role of grain boundaries in microcrystalline silicon—review of typical features;Thin Solid Films;2006-04

4. Model of electronic transport in microcrystalline silicon and its use for prediction of device performance;Journal of Non-Crystalline Solids;2004-06

5. The physics and technological aspects of the transition from amorphous to microcrystalline and polycrystalline silicon;physica status solidi (c);2004-03

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