Fabrication of Oxide-Confined Collector-Up Heterojunction Bipolar Transistors-Reference-Cited by-同舟云学术

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Fabrication of Oxide-Confined Collector-Up Heterojunction Bipolar Transistors

Published:2003-04-15 Issue:Part 2, No. 4B Volume:42 Page:L417-L418
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chen Wen-Bin,Su Yan-Kuin,Su Juh-Yuh,Wu Meng-Chi,Lin Chun-Liang,Wang Hsin-Chuan,Chen Shi-Ming,Chen Hong-Ren

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=4B/a=L417/pdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A collector-up heterojunction bipolar transistor using a p-type doping buried layer;Semiconductor Science and Technology;2006-11-09

2. Simulation and Fabrication of InGaP/Al0.98Ga0.02As/GaAs Oxide-Confined Collector-Up Heterojunction Bipolar Transistors;Japanese Journal of Applied Physics;2004-08-10

3. Study of GaN light-emitting diodes fabricated by laser lift-off technique;Journal of Applied Physics;2004-04-15

4. Fabrication of InGaP/Al/sub 0.98/Ga/sub 0.02/As/GaAs oxide-confined collector-up heterojunction bipolar transistors;IEEE Electron Device Letters;2003-10

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