A collector-up heterojunction bipolar transistor using a p-type doping buried layer
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Self-aligned InAlAs/InGaAs heterojunction bipolar transistor with a buried subcollector grown by selective epitaxy
2. A submicrometer 252 GHz f/sub T/ and 283 GHz f/sub MAX/ InP DHBT with reduced C/sub BC/ using selectively implanted buried subcollector (SIBS)
3. High-speed InGaP/GaAs transistors with a sidewall base contact structure
4. Reduction of base-collector capacitance by undercutting the collector and subcollector in GaInAs/InP DHBTs
5. High/f/sub max/ collector-up AlGaAs/GaAs heterojunction bipolar transistors with a heavily carbon-doped base fabricated using oxygen-ion implantation
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