A New Selective Area Lateral Epitaxy Approach for Depositing a-Plane GaN over r-Plane Sapphire-Reference-Cited by-同舟云学术

A New Selective Area Lateral Epitaxy Approach for Depositing a-Plane GaN over r-Plane Sapphire

Published:2003-07-15 Issue:Part 2, No. 7B Volume:42 Page:L818-L820
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chen Changqing,Zhang Jianping,Yang Jinwei,Adivarahan Vinod,Rai Shiva,Wu Shuai,Wang Hongmei,Sun Wenhong,Su Ming,Gong Zheng,Kuokstis Edmundas,Gaevski Mikhail,Khan Muhammad Asif

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=7B/a=L818/pdf

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