Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

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Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy

Published:2010-06-18 Issue:7 Volume:3 Page:075601
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Iida Daisuke,Nagata Kensuke,Makino Takafumi,Iwaya Motoaki,Kamiyama Satoshi,Amano Hiroshi,Akasaki Isamu,Bandoh Akira,Udagawa Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/3/i=7/a=075601/pdf

Reference23 articles.

1. Unusual properties of the fundamental band gap of InN

2. Theoretical possibilities of InxGa1−xN tandem PV structures

3. Theoretical simulation of DC and RF performance for AlInN/InGaN/AlInN double-heterojunction FET using a Monte Carlo approach

4. Electron mobility in InN and III-N alloys

5. Single phase InxGa1−xN (0.25≤x≤0.63) alloys synthesized by metal organic chemical vapor deposition

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pressure-dependent mode Grüneisen parameters and their impact on thermal expansion coefficient of zinc-blende InN;Journal of Materials Science;2023-05

2. High‐pressure MOCVD growth of InGaN thick films toward the photovoltaic applications;Fundamental Research;2021-12

3. Recent progress in red light-emitting diodes by III-nitride materials;Semiconductor Science and Technology;2021-11-26

4. Polarization-induced hole doping for long-wavelength In-rich InGaN solar cells;Applied Physics Letters;2021-11-15

5. Thickness-induced crossover from strong to weak collective pinning in exfoliated FeTe0.6Se0.4 thin films at 1 T;Physical Review B;2021-10-14

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