Fabrication of Single-Electron Transistor Composed of a Self-Assembled Quantum Dot and Nanogap Electrode by Atomic Force Microscope Local Oxidation-Reference-Cited by-同舟云学术

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Fabrication of Single-Electron Transistor Composed of a Self-Assembled Quantum Dot and Nanogap Electrode by Atomic Force Microscope Local Oxidation

Published:2010-03-12 Issue:3 Volume:3 Page:035001
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Moriya Rai,Kobayashi Hiroyuki,Shibata Kenji,Masubuchi Satoru,Hirakawa Kazuhiko,Ishida Satomi,Arakawa Yasuhiko,Machida Tomoki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/3/i=3/a=035001/pdf

Reference17 articles.

1. Lateral electron transport through single self-assembled InAs quantum dots

2. Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads

3. Electric-field control of tunneling magnetoresistance effect in a Ni∕InAs∕Ni quantum-dot spin valve

4. Spin-Related Current Suppression in a Semiconductor Quantum Dot Spin-Diode Structure

5. High Kondo temperature (TK∼80K) in self-assembled InAs quantum dots laterally coupled to nanogap electrodes

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1. Fabricating Methods and Materials for Nanogap Electrodes;Nanogap Electrodes;2021-07-23

2. Direct-write single electron transistors by focused electron beam induced deposition;Nano Futures;2019-04-18

3. Time evolution studies of laser induced chemical changes in InAs nanowire using Raman spectroscopy;Applied Physics Letters;2014-07-07

4. Transition behaviors in biased asymmetric quantum dot-in-double-well photodetector;Current Applied Physics;2014-05

5. Cross-sectional transmission electron microscopy analysis of a single self-assembled quantum dot single electron transistor fabricated by atomic force microscope local oxidation;Japanese Journal of Applied Physics;2014-03-31

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