Effects of Ultrathin Al Layer Insertion on Resistive Switching Performance in an Amorphous Aluminum Oxide Resistive Memory-Reference-Cited by-同舟云学术

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Effects of Ultrathin Al Layer Insertion on Resistive Switching Performance in an Amorphous Aluminum Oxide Resistive Memory

Published:2010-08-20 Issue:9 Volume:3 Page:091101
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Song Jaehoon,Inamdar Akbar I.,Jang ByeongUk,Jeon Kiyoung,Kim YoungSam,Jung Kyooho,Kim Yongmin,Im Hyunsik,Jung Woong,Kim Hyungsang,Hong J. P.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/3/i=9/a=091101/pdf

Reference20 articles.

1. Fast phase transitions induced by picosecond electrical pulses on phase change memory cells

2. Multi-layer stackable polymer memory devices

3. Effect of annealing on charge transfer in Ge nanocrystal based nonvolatile memory structure

4. Toward a Universal Memory

5. Nanoionics-based resistive switching memories

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2. Laser-Assisted Interface Engineering for Functional Interfacial Layer of Al/ZnO/Al Resistive Random Access Memory (RRAM);ACS Applied Materials & Interfaces;2020-06-18

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4. Effects of Gibbs free energy difference and oxygen vacancies distribution in a bilayer ZnO/ZrO2 structure for applications to bipolar resistive switching;Applied Surface Science;2019-12

5. Al2O3 thin film multilayer structure for application in RRAM devices;Solid-State Electronics;2018-11

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