Pulsed Operation of InGaAsP/InGaP Double Heterostructure Visible Lasers Grown by Metalorganic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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Pulsed Operation of InGaAsP/InGaP Double Heterostructure Visible Lasers Grown by Metalorganic Chemical Vapor Deposition

Published:1985-02-20 Issue:Part 2, No. 2 Volume:24 Page:L131-L132
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Iwamoto Takashi,Mori Kazuo,Mizuta Masashi,Kukimoto Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Liquid Phase Epitaxy and Growth Technology;Process Technology for Semiconductor Lasers;1996

2. Metalorganic vapor phase epitaxial growth of GaInAsP/GaAs;Journal of Electronic Materials;1995-11

3. Determination of the conduction‐band discontinuities of In0.5Ga0.5P/In1−xGaxAs1−yPy by capacitance–voltage analysis;Applied Physics Letters;1995-04-03

4. Fabrication and lasing characteristics of 0.67 µm GaInAsP/AlGaAs visible lasers prepared by liquid phase epitaxy on;IEEE Journal of Quantum Electronics;1987-02

5. Organometallic growth and characterization of GaxIn1−xP (x=0.51, 0.65, 0.69);Journal of Applied Physics;1986-08-15

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