Degradation of Nitride/W/WNx/Poly-Si Gate Stack by Post-Thermal Processes-Reference-Cited by-同舟云学术

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Degradation of Nitride/W/WNx/Poly-Si Gate Stack by Post-Thermal Processes

Published:2005-04-21 Issue:4B Volume:44 Page:2221-2224
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Cho Heung-Jae,Jang Se-Aug,Kim Yong Soo,Lim Kwan-Yong,Oh Jae-Geun,Lee Jung-Ho,Park Tae-Su,Back Tae-Sun,Yang Jun-Mo,Yang Hong-Seon,Sohn Hyun-Chul,Kim Jin-Woong

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Negative Bias Temperature Instability for Sputtering Modification in a TiN Diffusion Barrier of p+ Polysilicon Gate Stack in 50-nm DRAM Technology;IEEE Transactions on Device and Materials Reliability;2013-03

2. Influence of Hydrogen Incorporation on the Reliability of Gate Oxide Formed by Using Low-Temperature Plasma Selective Oxidation Applicable to Sub-50-nm W-Polymetal Gate Devices;IEEE Electron Device Letters;2008-04

3. Gate Oxide Reliability Characterization of Tungsten Polymetal Gate with Low-Contact-Resistive WSix/WN Diffusion Barrier in Memory Devices;Japanese Journal of Applied Physics;2007-11-06

4. Impact of Thin WSIX Insertion in Tungsten Polymetal Gate on Gate Oxide Reliability and Gate Contact Resistance;2006 IEEE International Reliability Physics Symposium Proceedings;2006

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