Electronic Structure of Ordered Ga0.5In0.5P/GaAs Heterointerface Studied by Raman-Scattering and Photoluminescence-Excitation Measurements-Reference-Cited by-同舟云学术

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Electronic Structure of Ordered Ga0.5In0.5P/GaAs Heterointerface Studied by Raman-Scattering and Photoluminescence-Excitation Measurements

Published:2005-10-11 Issue:10 Volume:44 Page:7390-7394
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yamashita Kenichi,Oe Kunishige,Kita Takashi,Wada Osamu,Wang Yong,Geng Christian,Scholz Ferdinand,Schweizer Heinz

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence upconversion atGaAs/InGaP2interfaces driven by a sequential two-photon absorption mechanism;Physical Review B;2016-06-09

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