Suppression of Boron Penetration from Source/Drain-Extension to Improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65-nm Node CMOS and Beyond-Reference-Cited by-同舟云学术

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Suppression of Boron Penetration from Source/Drain-Extension to Improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65-nm Node CMOS and Beyond

Published:2005-04-21 Issue:4B Volume:44 Page:2157-2160
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hayashi Takashi,Yamashita Tomohiro,Shiga Katsuya,Hayashi Kiyoshi,Oda Hidekazu,Eimori Takahisa,Inuishi Masahide,Ohji Yuzuru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation on boron diffusion effects in buried oxide of Si nanocrystals (Si NCs) embedded Silicon-on-Insulator;Materials Science in Semiconductor Processing;2023-06

2. Functional nitrogen science based on plasma processing: quantum devices, photocatalysts and activation of plant defense and immune systems;Japanese Journal of Applied Physics;2021-12-15

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