Photoluminescence Studies of In-Doped GaN:Mg Films-Reference-Cited by-同舟云学术

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Photoluminescence Studies of In-Doped GaN:Mg Films

Published:2005-10-11 Issue:10 Volume:44 Page:7504-7506
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chang Fu-Chin,Chou Wu-Chin,Chen Wen-Hsiung,Lee Ming-Chih,Chen Wei-Kuo,Huang Huai-Ying

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides;Scientific Reports;2016-08

2. Co-doping of magnesium with indium in nitrides: first principle calculation and experiment;RSC Advances;2016

3. Elimination of defects in In–Mg codoped GaN layers probed by strain analysis;Japanese Journal of Applied Physics;2014-04-30

4. Characteristics of Mg-doped and In–Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition;Journal of Physics D: Applied Physics;2010-04-21

5. In Co-Doping Effect on the Optical Properties of P-Type GaN Epilayers;Korean Journal of Materials Research;2008-08-31

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