Improvement of Mesa-Sidewall Leakage Current Using Benzocyclobuten Sidewall Process in InGaAs/InP MSM Photodetector-Reference-Cited by-同舟云学术

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Improvement of Mesa-Sidewall Leakage Current Using Benzocyclobuten Sidewall Process in InGaAs/InP MSM Photodetector

Published:2005-04-21 Issue:4B Volume:44 Page:2586-2587
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chiu Wei-Yu,Huang Fan-Hsiu,Wu Yen-Shian,Lin Don-Ming,Chan Yi-Jen,Chen Shu-Han,Chyi Jen-Inn,Shi Jin-Wei

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors;Laser & Photonics Reviews;2020-12-03

2. Diode Characteristics Approaching Bulk Limits in GaAs Nanowire Array Photodetectors;Nano Letters;2017-03-27

3. Patterned Radial GaAs Nanopillar Solar Cells;Nano Letters;2011-05-23

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