Elevated-Confined Phase-Change Random Access Memory Cells-Reference-Cited by-同舟云学术

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Elevated-Confined Phase-Change Random Access Memory Cells

Published:2010-04-20 Issue:4 Volume:49 Page:04DD16
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Hock,Luping textscShi,Rong textscZhao,Hongxin textscYang,Guan textscLim Kian,Jianming textscLi,Chong textscChong Tow

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference4 articles.

1. Study on nitrogen doped Ge2Sb2Te5 films for phase change memory

2. Nitrogen-doped Ge2Sb2Te5 films for nonvolatile memory

3. Simulation of Proposed Confined-Chalcogenide Phase-Change Random Access Memory for Low Reset Current by Finite Element Modelling

4. Plastic Deformation and Failure Analysis of Phase Change Random Access Memory

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Programming current density reduction for elevated-confined phase change memory with a self-aligned oxidation TiWOx heater;Applied Physics Letters;2014-11-24

2. Endurance Enhancement of Elevated-Confined Phase Change Random Access Memory;Japanese Journal of Applied Physics;2012-02-20

3. Endurance Enhancement of Elevated-Confined Phase Change Random Access Memory;Japanese Journal of Applied Physics;2012-02-01

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