Programming current density reduction for elevated-confined phase change memory with a self-aligned oxidation TiWOx heater-Reference-Cited by-同舟云学术

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Programming current density reduction for elevated-confined phase change memory with a self-aligned oxidation TiWOx heater

Published:2014-11-24 Issue:21 Volume:105 Page:213509
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yang Hongxin¹,Lee Hock Koon¹,Zhao Rong²,Shi Luping³,Chong Tow Chong²

Affiliation:

1. Data Storage Institute, A☆STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608

2. Singapore University of Technology and Design, 20 Dover Drive, Singapore 138682

3. Department of Precision Instrument, Tsinghua University, Beijing 100084, People's Republic of China

Funder

Data Storage Institute - A STAR (DSI)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4902872

Reference17 articles.

1. Low-cost and nanoscale non-volatile memory concept for future silicon chips

2. Lateral SbTeN based multi-layer phase change memory for multi-state storage

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2. Influence of metal electrode on the performance of ZnO based resistance switching memories;Journal of Applied Physics;2017-10-21

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4. Improving the operational characteristic stability in Al/Au/ZnO/Al resistive random access memory devices;Japanese Journal of Applied Physics;2016-02-24

5. Oxygen-doped Sb2Te3 for high-performance phase-change memory;Applied Surface Science;2015-09

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