Improving the operational characteristic stability in Al/Au/ZnO/Al resistive random access memory devices
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=4/a=044101/pdf
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1. Write-Optimized STT-MRAM Bit-Cells Using Asymmetrically Doped Transistors
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