Evaluation of Interface Property and DC Characteristics Enhancement in Nanoscale n-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using Stress Memorization Technique-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Evaluation of Interface Property and DC Characteristics Enhancement in Nanoscale n-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using Stress Memorization Technique

Published:2010-09-06 Issue:9 Volume:49 Page:090207
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Huang Po Chin,Wu San Lein,Chang Shoou Jinn,Huang Yao Tsung,Kuo Cheng Wen,Chang Ching Yao,Cheng Yao Chin,Cheng Osbert

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference9 articles.

1. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

2. Controlled misfit dislocation technology in strained silicon MOSFETs

3. Tradeoff between short channel effect and mobility in strained-Si nMOSFETs

4. A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors

5. Electrical noise and RTS fluctuations in advanced CMOS devices

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP