Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN p-Type Metal–Oxide–Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference9 articles.
1. Random telegraph signal: An atomic probe of the local current in field-effect transistors
2. Probing a nonuniform two-dimensional electron gas with random telegraph signals
3. Evaluation of NBTI in<tex>$hbox HfO_2$</tex>Gate-Dielectric Stacks With Tungsten Gates
4. What Do We Certainly Know About $\hbox{1}/f$ Noise in MOSTs?
5. Enhanced multiphonon capture of hot electrons by deep centers with strong lattice coupling: A Monte Carlo study of InP:Fe
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