Random telegraph signal: An atomic probe of the local current in field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366892
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1. Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (1f?) Noise
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3. Individual defects at the Si:SiO2interface
4. Evaluation of the Coulomb energy for single‐electron interface trapping in sub‐μm metal‐oxide‐semiconductor field‐effect transistors
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