A Study of Flare Variation in Extreme Ultraviolet Lithography for Sub-22 nm Line and Space Pattern
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference18 articles.
1. Full field EUV lithography turning into a reality at IMEC
2. EUV lithography with the Alpha Demo Tools: status and challenges
3. Scattered light in photolithographic lenses
4. Impact of EUV light scatter on CD control as a result of mask density changes
5. Evaluation of shadowing and flare effect for EUV tool
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1. Concurrent Steiner Tree Selection for Global routing with EUVL Flare Reduction;Integration;2023-09
2. A study on flare minimisation in EUV lithography by post‐layout re‐allocation of wire segments;IET Circuits, Devices & Systems;2021-03-29
3. Impact of flare on source mask optimization in EUVL for 7nm technology node;Extreme Ultraviolet (EUV) Lithography XI;2020-03-23
4. Optimized Multigrid Strategy for Accurate Flare Modeling with Three-Dimensional Mask Effect in Extreme-Ultraviolet Lithography;Japanese Journal of Applied Physics;2012-06-20
5. Optimized Multigrid Strategy for Accurate Flare Modeling with Three-Dimensional Mask Effect in Extreme-Ultraviolet Lithography;Japanese Journal of Applied Physics;2012-06-01
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