Effect of Hydrogen Termination on Surface Roughness Variation of Si(110) by Reflow Oxidation during High-Temperature Ar Annealing-Reference-Cited by-同舟云学术

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Effect of Hydrogen Termination on Surface Roughness Variation of Si(110) by Reflow Oxidation during High-Temperature Ar Annealing

Published:2010-08-20 Issue:8 Volume:49 Page:085701
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Araki Koji,Isogai Hiromichi,Takeda Ryuji,Izunome Koji,Matsushita Yoshiaki,Zhao Xinwei

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference12 articles.

1. Monte Carlo study of electron transport in silicon inversion layers

2. Nonuniformity in Ultrathin SiO2on Si(111) Characterized by Conductive Atomic Force Microscopy

3. Passivation Technologies for Semiconductors. Structure of Hydrogen-Passivated Si Surfaces Studied by STM.

4. Evidence of spontaneous formation of steps on silicon (100)

5. Effect of Reflow Oxidation on Si Surface Roughness during High-Temperature Annealing

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface roughness analysis of Cu films deposited on Si substrates: A molecular dynamic analysis;Journal of Applied Physics;2019-07-28

2. Reduction in the interface-states density of metal-oxide-semiconductor field-effect transistors fabricated on high-index Si (114) surfaces by using an external magnetic field;Journal of Applied Physics;2014-08-14

3. Effect of Hydrogen for Preservation of Reconstructed Surfaces;Solid State Phenomena;2013-10

4. Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on (110) Si;Japanese Journal of Applied Physics;2013-04-01

5. Alternative smoothing techniques to mitigate EUV substrate defectivity;SPIE Proceedings;2012-03-29

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