Epitaxial Growth and Electrical Properties of Thick SmSi2Layers on (001) Silicon-Reference-Cited by-同舟云学术

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Epitaxial Growth and Electrical Properties of Thick SmSi2Layers on (001) Silicon

Published:2010-02-22 Issue:2 Volume:49 Page:025505
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Natali Franck,Plank Natalie O. V.,Ludbrook Bart M.,Richter Jan,Minnee Thom,Ruck Ben J.,Trodahl H. Joe,Kennedy John V.,Hirsch Lionel

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference33 articles.

1. Epitaxial growth of rare‐earth silicides on (111) Si

2. Electronic transport properties of epitaxial erbium silicide/silicon heterostructures

3. Low Schottky barrier of rare‐earth silicide onn‐Si

4. Flatband Conditions Observed for Lanthanide-Silicide Monolayers onn-Type Si(111)

5. Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial growth of (100)-oriented SmN directly on (100)Si substrates;Physical Review Materials;2021-11-29

2. Effects of the Mo composition of Mo-alloyed Yb/Si contacts on the microstructures and electrical properties;Japanese Journal of Applied Physics;2016-05-12

3. Growth and structure characterization of EuSi 2 films and nanoislands on vicinal Si(001) surface;Journal of Crystal Growth;2014-12

4. Morphological and structural characterization of Sm–O–S compounds prepared by thermolysis of dithiocarbamate precursors;Thin Solid Films;2014-04

5. Epitaxial samarium disilicide films on silicon (0 0 1) substrates: growth, structural and electrical properties;Journal of Physics D: Applied Physics;2011-03-16

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