Theoretical Optimization of Base Doping Concentration for Radiation Resistance of InGaP Subcells of InGaP/GaAs/Ge Based on Minority-Carrier Lifetime-Reference-Cited by-同舟云学术

Theoretical Optimization of Base Doping Concentration for Radiation Resistance of InGaP Subcells of InGaP/GaAs/Ge Based on Minority-Carrier Lifetime

Published:2010-12-20 Issue:12 Volume:49 Page:121201
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Elfiky Dalia,Yamaguchi Masafumi,Sasaki Takuo,Takamoto Tatsuya,Morioka Chiharu,Imaizumi Mitsuru,Ohshima Takeshi,Sato Shin-ichiro,Elnawawy Mohamed,Eldesoky Tarek,Ghitas Ahmed

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference14 articles.

1. Multi-junction III–V solar cells: current status and future potential

2. Base doping optimization for radiation-hard Si, GaAs, and InP solar cells

3. Proton radiation analysis of multi-junction space solar cells

4. Using SRIM to calculate the relative damage coefficients for solar cells

5. Activity and current status of R&D on space solar cells in Japan

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