Defect analysis of 1-MeV electron irradiated flexible InGaAs solar cells by deep-level transient spectroscopy and photoluminescence-Reference-Cited by-同舟云学术

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Defect analysis of 1-MeV electron irradiated flexible InGaAs solar cells by deep-level transient spectroscopy and photoluminescence

Published:2024-03 Issue: Volume:171 Page:108033
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Wang Z.X.,Liu M.Q.,Wang T.B.,Zhang S.Y.,Li M.,Tang G.H.,Zhuang Y.,Yang X.,Zhong L.,Aierken A.^ORCID

Funder

Applied Basic Research Foundation of Yunnan Province

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference33 articles.

1. Improved radiation resistance of epitaxial lift-off inverted metamorphic solar cells;Adams,2013

2. Flexible and lightweight epitaxial lift-off GaAs multi-junction solar cells for portable power and UAV applications;Stender,2015

3. Flexible four-junction inverted metamorphic AlGaInP/AlGaAs/In0.17Ga0.83As/In0.47Ga0.53As solar cell;Huang;Sol. Energy Mater. Sol. Cells,2020

4. Effects of Zn diffusion in tunnel junction and its solution for high efficiency large area flexible GaInP/GaAs/InGaAs tandem solar cell;Wang;Sol. Energy Mater. Sol. Cells,2021

5. Development of InGaP/GaAs/InGaAs Inverted Triple Junction Concentrator Solar Cells;Sasaki,2013

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