Investigation of Low-Energy Tilted Ion Implantation for Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Extension Doping-Reference-Cited by-同舟云学术

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Investigation of Low-Energy Tilted Ion Implantation for Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Extension Doping

Published:2010-04-20 Issue:4 Volume:49 Page:04DC18
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Liu Yongxun,Matsukawa Takashi,Endo Kazuhiko,O'uchi Shinich,Sakamoto Kunihiro,Tsukada Junichi,Ishikawa Yuki,Yamauchi Hiromi,Masahara Meishoku

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference11 articles.

1. Extension and source/drain design for high-performance finFET devices

2. Investigation of N-Channel Triple-Gate Metal–Oxide–Semiconductor Field-Effect Transistors on (100) Silicon On Insulator Substrate

3. Experimental Evaluation of Effects of Channel Doping on Characteristics of FinFETs

4. Dopant profiling in vertical ultrathin channels of double-gate metal–oxide–semiconductor field-effect transistors by using scanning nonlinear dielectric microscopy

5. Demonstration of Dopant Profiling in Ultrathin Channels of Vertical-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor by Scanning Nonlinear Dielectric Microscopy

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1. Polarization-Insensitive Vertically Curved Si Surface Optical Coupler Bent by Ion Implantation;IEEE Photonics Technology Letters;2020-10-15

2. 3D AND-Type Stacked Array for Neuromorphic Systems;Micromachines;2020-08-31

3. Impact of residual defects caused by extension ion implantation in FinFETs on parasitic resistance and its fluctuation;Solid-State Electronics;2017-06

4. An experimental study of solid source diffusion by spin on dopants and its application for minimal silicon-on-insulator CMOS fabrication;Japanese Journal of Applied Physics;2017-04-20

5. (Invited) Floating Gate Type SOI-FinFET Flash Memories with Different Channel Shapes and Interpoly Dielectric Materials;ECS Transactions;2016-04-26

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