High Voltage AlGaN/GaN High-Electron-Mobility Transistors Employing Surface Treatment by Deposition and Removal of Silicon Dioxide Layer-Reference-Cited by-同舟云学术

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High Voltage AlGaN/GaN High-Electron-Mobility Transistors Employing Surface Treatment by Deposition and Removal of Silicon Dioxide Layer

Published:2010-04-20 Issue:4 Volume:49 Page:04DF06
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Choi Young-Hwan,Kim Sun-Jae,Kim Young-Shil,Kim Min-Ki,Seok Ogyun,Han Min-Koo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference9 articles.

1. GaN: Processing, defects, and devices

2. Effect of ohmic contacts on buffer leakage of GaN transistors

3. Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition

4. Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors

5. Etch characteristics of GaN using inductively coupled Cl2/Ar and Cl2/BCl3 plasmas

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 90 nm gate length enhancement-mode AlGaN/GaN HEMTs with plasma oxidation technology for high-frequency application;Applied Physics Letters;2017-10-23

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