Improvements in Optical Power and Emission Angle of Blue Light Emitting Diodes Using Patterned Sapphire Substrates with Low Threading Dislocation Densities-Reference-Cited by-同舟云学术

Improvements in Optical Power and Emission Angle of Blue Light Emitting Diodes Using Patterned Sapphire Substrates with Low Threading Dislocation Densities

Published:2010-04-20 Issue:4 Volume:49 Page:04DH02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Jeong Seong-Muk,Kissinger Suthan,Ra Yong-Ho,Yun Seok-Hyo,Kim Dong-Wook,Lee Seung Jae,Ahn Haeng-Keun,Kim Jin-Soo,Lee Cheul-Ro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference30 articles.

1. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

2. 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

3. P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy

4. Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN

5. Room Temperature 339 nm Emission from Al0.13Ga0.87N/Al0.10Ga0.90N Double Heterostructure Light-Emitting Diode on Sapphire Substrate

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1. Formation of distinctive structures of GaN by inductively-coupled-plasma and reactive ion etching under optimized chemical etching conditions;AIP Advances;2017-06

2. Epitaxial Growth of GaN on Patterned Sapphire Substrates;Topics in Applied Physics;2017

3. InGaN-Based Light-Emitting Diodes Fabricated on Nano Patterned Sapphire Substrates with Pillar Height of More than 600 nm by Nanoimprint Lithography;Japanese Journal of Applied Physics;2013-11-01

4. Epitaxy Part B. Epitaxial Growth of GaN on Patterned Sapphire Substrates;Topics in Applied Physics;2013

5. Improved External Quantum Efficiency and Controlled Light Distribution for Light-Emitting Diodes with Cone Array Composed of SiO$_{x}$N$_{y}$;Applied Physics Express;2012-08-31