InGaN-Based Light-Emitting Diodes Fabricated on Nano Patterned Sapphire Substrates with Pillar Height of More than 600 nm by Nanoimprint Lithography-Reference-Cited by-同舟云学术

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InGaN-Based Light-Emitting Diodes Fabricated on Nano Patterned Sapphire Substrates with Pillar Height of More than 600 nm by Nanoimprint Lithography

Published:2013-11-01 Issue:11S Volume:52 Page:11NG02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Okada Narihito,Egami Takuya,Miyoshi Seita,Inomoto Ryo,Yamane Keisuke,Tadatomo Kazuyuki,Nishimiya Tomoyasu,Hiramoto Michihiro,Motoyama Shin-ichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference25 articles.

1. Successful natural stress-induced separation of hydride vapor phase epitaxy-grown GaN layers on sapphire substrates

2. Growth of thick GaN layers with hydride vapour phase epitaxy

3. Studies about wafer bow of freestanding GaN substrates grown by hydride vapor phase epitaxy

4. Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching

5. Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanofabrication through molding;Progress in Materials Science;2022-04

2. Application of patterned sapphire substrate for III-nitride light-emitting diodes;Nanoscale;2022

3. Implementation of a High-Performance GaN-Based Light-Emitting Diode Grown on a Nanocomb-Shaped Patterned Sapphire Substrate;IEEE Journal of Quantum Electronics;2014-12

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