The Dependence of Field Effect Mobilities on Substrate Temperature for Amorphous Silicon Deposition for Amorphous Silicon Thin Film Transistors-Reference-Cited by-同舟云学术

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The Dependence of Field Effect Mobilities on Substrate Temperature for Amorphous Silicon Deposition for Amorphous Silicon Thin Film Transistors

Published:1988-11-20 Issue:Part 2, No. 11 Volume:27 Page:L2010-L2012
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Oyoshi Keiji,Kusuda Yukihisa,Yamaoka Tomonori,Tanaka Shuhei

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal Annealing Effect on Amorphous Silicon Thin-Film Transistors Fabricated on a Flexible Stainless Steel Substrate;Electrochemical and Solid-State Letters;2007

2. Effects of post-annealing on a-Si:H TFT characteristics fabricated on stainless-steel substrate;Journal of the Society for Information Display;2007

3. Deposition of Intrinsic and Doped Semiconductor Thin Films for a-Si:H TFT;Thin Film Transistors;2004

4. Relative importance of deposition rate for surface potential in amorphous silicon/SiO2 interface;Journal of Physics D: Applied Physics;2002-08-07

5. Influence of low-temperature annealing on the dielectric characteristics and final parameters of SiO2 MIS thin film transistors;Thin Solid Films;1997-04

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