Thermal Annealing Effect on Amorphous Silicon Thin-Film Transistors Fabricated on a Flexible Stainless Steel Substrate-Reference-Cited by-同舟云学术

Thermal Annealing Effect on Amorphous Silicon Thin-Film Transistors Fabricated on a Flexible Stainless Steel Substrate

Published:2007 Issue:5 Volume:10 Page:J65
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Han Chang-Wook,Han Min-Koo,Paek Seung-Han,Kim Chang-Dong,Chung In-Jae

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference11 articles.

1. J. F. Chang, J. S. Wu, C. J. Huang, Y. H. Chen, L. T. Wang, Y. R. Luo, I. H. Peng, T. C. Wong., M. C. Wang, and J. Chang , in Proceedings of Eurodisplay , p. 133 (2005).

2. High electron mobility polycrystalline silicon thin-film transistors on steel foil substrates

3. S. Wagner, H. Gleskova, I. C. Cheng, J. C. Sturm, and Z. Suo , in Flexible Flat Panel Displays , G. P. Crawford , Editor, p. 268, John Wiley & Sons Ltd., Chichester (2005).

4. Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250/spl deg/C to 280/spl deg/ C

5. Effects of the Deposition Sequence on Amorphous Silicon Thin-Film Transistors

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