Extremely Sharp Photoluminescence from InGaAs/GaAs Quantum Wells Grown by Flow-Rate Modulation Epitaxy-Reference-Cited by-同舟云学术

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Extremely Sharp Photoluminescence from InGaAs/GaAs Quantum Wells Grown by Flow-Rate Modulation Epitaxy

Published:1988-11-20 Issue:Part 2, No. 11 Volume:27 Page:L2192-L2194
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sato Michio,Horikoshi Yoshiji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence Quenching by Optical Bias in AlGaAs/GaAs Single Quantum Wells;Japanese Journal of Applied Physics;2001-11-15

2. Growth and Characterization of InAsxP1−x/InP Strained Multiple Quantum Wells by Gas Source Molecular Beam Expitaxy;MRS Proceedings;1996

3. Effect of indium replacement by gallium on the energy gaps of InAs/GaAs thin‐layer structures;Journal of Applied Physics;1991-06

4. Electronic structure of an InAs monomolecular plane in GaAs;Physical Review B;1990-08-15

5. Photoluminescence from GaAs/AlGaAs quantum wells with InAs monomolecular planes grown by flow-rate modulation epitaxy;Surface Science;1990-04

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