Evaluation of MQW Wafer for Surface-Emitting Laser by X-Ray Diffraction-Reference-Cited by-同舟云学术

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Evaluation of MQW Wafer for Surface-Emitting Laser by X-Ray Diffraction

Published:1988-03-20 Issue:Part 1, No. 3 Volume:27 Page:438-439
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Onda Haruka,Uenohara Hiroyuki,Koyama Fumio,Iga Kenichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pulsed metalorganic chemical vapor deposition of high quality AlN/GaN superlattices for intersubband transitions;SPIE Proceedings;2009-01-24

2. Intersubband transition in (GaN)m/(AlN)n superlattices in the wavelength range from 1.08 to 1.61 μm;Applied Physics Letters;2002-08-12

3. Microtube-Czochralski technique (μT-CZ):;Journal of Crystal Growth;1998-09

4. Optoelectronic aspects of strained Si1?xGex/Si quantum wells;Journal of Materials Science: Materials in Electronics;1995-10

5. Czochralski and modified Bridgman-Stockbarger growth of pure, Cd2+ and Nd3+ doped benzil single crystals;Journal of Crystal Growth;1993-03

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