Substrate Damage Prevention and Simultaneous ZMR in Stacked SOI Layers-Reference-Cited by-同舟云学术

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Substrate Damage Prevention and Simultaneous ZMR in Stacked SOI Layers

Published:1988-10-20 Issue:Part 2, No. 10 Volume:27 Page:L1938-L1941
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Theunissen M. J. J.,Baumgart H.,Haisma J.,Mulder J. M. L.,Rutten W. P. M.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Avoidance of Substrate Damage upon Laser Recrystallization of a SOI Layer;Journal of The Electrochemical Society;1991-04-01

2. Technology and Devices for Silicon Based Three-Dimensional Circuits;Novel Silicon Based Technologies;1991

3. Experimental verification of temperature calculations in multilayers used for CO2laser recrystallization of silicon‐on‐insulator films;Journal of Applied Physics;1990-07-15

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