Characterization of Hf0.3Al0.7OxFabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams-Reference-Cited by-同舟云学术

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Characterization of Hf0.3Al0.7OxFabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams

Published:2004-11-15 Issue:11B Volume:43 Page:7848-7852
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Uedono Akira,Goto Masakazu,Higuchi Keiichi,Shiraishi Kenji,Yamabe Kikuo,Kitajima Hiroshi,Mitsuhashi Riichiro,Horiuchi Atsushi,Torii Kazuyoshi,Arikado Tsunetoshi,Suzuki Ryoichi,Ohdaira Toshiyuki,Yamada Keisaku

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/43/i=11S/a=7848/pdf

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of high-kgate dielectrics by means of positron annihilation;physica status solidi (c);2007-09

2. Characterization of Metal/High-kStructures Using Monoenergetic Positron Beams;Japanese Journal of Applied Physics;2007-05-17

3. Dielectric constants of amorphous hafnium aluminates: First-principles study;Physical Review B;2007-05-07

4. Introduction of defects into HfO2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation;Journal of Applied Physics;2006-09-15

5. Impact of nitridation on open volumes in HfSiOx studied using monoenergetic positron beams;Applied Physics Letters;2006-04-24

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