Abnormal Oxidation of Nickel Silicide on N-Type Substrate and Effect of Preamorphization Implantation-Reference-Cited by-同舟云学术

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Abnormal Oxidation of Nickel Silicide on N-Type Substrate and Effect of Preamorphization Implantation

Published:2004-10-08 Issue:10 Volume:43 Page:6998-6999
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yun Jang-Gn,Oh Soon-Young,Ji Hee-Hwan,Huang Bin-Feng,Park Young-Ho,Wang Jin-Suk,Park Seong-Hyung,Bae Tae-Sung,Lee Hi-Deok

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/43/i=10R/a=6998/pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A comparative study of C, N and Xe pre-amorphization implantation processes for improving the thermal stability of NiSi films;Microelectronic Engineering;2024-08

2. Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide;Japanese Journal of Applied Physics;2010-05-20

3. Improvement of the Thermal Stability of NiSi by Germanium Ion Implantation;Journal of The Electrochemical Society;2010

4. Effects of Strained Silicon Layer on Nickel (Germano)silicide for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transistor Device;Japanese Journal of Applied Physics;2008-10-17

5. Control of oxidation on NiSix during etching and ashing processes;Thin Solid Films;2007-04

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