Characteristics of Broad-Area InGaAs Submonolayer Quantum-Dot Vertical-Cavity Surface-Emitting Lasers-Reference-Cited by-同舟云学术

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Characteristics of Broad-Area InGaAs Submonolayer Quantum-Dot Vertical-Cavity Surface-Emitting Lasers

Published:2007-10-09 Issue:10A Volume:46 Page:6670-6672
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yang Hung-Pin D.,Hsu I-Chen,Lai Fang-I,Lin Gray,Hsiao Ru-Shang,Maleev Nikolai A.,Blokhin Sergej A.,Kuo Hao-Chung,Chi Jim Yung

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference8 articles.

1. Vertical-Cavity Surface-Emitting Lasers for Optical Data Storage

2. Low-threshold operation of 1.34-/spl mu/m GaInNAs VCSEL grown by MOVPE

3. High-speed characteristics of large-area single-transverse-mode vertical-cavity surface-emitting lasers

4. Large two‐dimensional arrays of phase‐locked vertical cavity surface emitting lasers

5. InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 [micro sign]m

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved optical properties of InAs submonolayer quantum dots in GaAsSb/InGaAs double-well structure;Applied Physics Letters;2019-08-26

2. InGaAs Submonolayer Quantum-Dot Photonic-Crystal LEDs for Fiber-Optic Communications;Quantum Dot Devices;2012

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