Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures-Reference-Cited by-同舟云学术

Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures

Published:2007-04-05 Issue:4A Volume:46 Page:1415-1426
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Miyajima Shinsuke,Yamada Akira,Konagai Makoto

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference32 articles.

1. Intrinsic Optical Absorption in Single-Crystal Silicon Carbide

2. Optical Absorption inn-Type Cubic SiC

3. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

4. A calculation of valence band masses, exciton and acceptor energies and the ground state properties of the electron-hole liquid in cubic SiC

5. Low‐temperature growth of 3C‐SiC by the gas source molecular beam epitaxial method

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