Development of Conductive SiCx:H as a New Hydrogenation Technique for Tunnel Oxide Passivating Contacts-Reference-Cited by-同舟云学术

Development of Conductive SiCx:H as a New Hydrogenation Technique for Tunnel Oxide Passivating Contacts

Published:2020-06-17 Issue: Volume: Page:
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Qiu Kaifu¹²^ORCID,Pomaska Manuel¹,Li Shenghao¹²^ORCID,Lambertz Andreas¹,Duan Weiyuan¹,Gad Alaaeldin¹,Geitner Matthias³,Brugger Jana³,Liang Zongcun²⁴⁵,Shen Hui²⁴⁵^ORCID,Finger Friedhelm¹,Rau Uwe¹,Ding Kaining¹

Affiliation:

1. IEK-5 Photovoltaik, Forschungszentrum Jülich, 52428, Jülich, Germany

2. School of Physics, Sun Yat-Sen University, Guangzhou, 510275, PR China

3. Helmholtz Nano Facility, Forschungszentrum Jülich, 52428, Jülich, Germany

4. Institute for Solar Energy Systems, Guangdong Provincial Key Laboratory of Photovoltaic Technology, Sun Yat-Sen University, 510006 Guangzhou, China

5. State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou, Guangdong Province PR China

Funder

National Natural Science Foundation of China

Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering

Guangzhou collaborative innovation Major Project for producing, teaching and researching

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c06637

Reference42 articles.

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2. Glunz, S.; Feldmann, F.; Richter, A.; Bivour, M.; Reichel, C.; Steinkemper, H.; Benick, J.; Hermle, M. The Irresistible Charm of a Simple Current Flow Pattern – 25% with a Solar Cell Featuring a Full-Area Back Contact, 2015.

3. Separating the two polarities of the POLO contacts of an 26.1%-efficient IBC solar cell

4. Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects

5. Surface passivation of crystalline silicon solar cells: Present and future

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