Design Rule of Electron- and Hole-Selective Contacts for Polycrystalline Silicon-Based Passivating Contact Solar Cells-Reference-Cited by-同舟云学术

Design Rule of Electron- and Hole-Selective Contacts for Polycrystalline Silicon-Based Passivating Contact Solar Cells

Published:2023-09-29 Issue:40 Volume:15 Page:46849-46860
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Mo Sung-In¹²,Choi Sungjin³,An Jeong-Ho¹²^ORCID,Kim Bo-Jong⁴,Min Kwan Hong³,Park Sungeun³,Hong Ji-Eun¹,Oh Soong Ju²^ORCID,Song Hee-eun³,Oh Joon-Ho¹,Kim Ka-Hyun⁴^ORCID

Affiliation:

1. Ulsan Advanced Energy Technology R&D Center, Korea Institute of Energy Research, 44776 Ulsan, South Korea

2. Department of Materials Science and Engineering, Korea University, 02841 Seoul, South Korea

3. Photovoltaics Research Department, Korea Institute of Energy Research, 34129 Daejeon, South Korea

4. Department of Physics, Chungbuk National University, 28644 Cheongju, South Korea

Funder

Korea Institute of Energy Research

National Research Council of Science and Technology

National Research Foundation of Korea

Korea Institute of Energy Technology Evaluation and Planning

Korea Evaluation Institute of Industrial Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c08957

Reference67 articles.

1. Terawatt-scale photovoltaics: Transform global energy

2. Polysilicon passivated junctions: The next technology for silicon solar cells?

3. Passivating contacts for high-efficiency silicon-based solar cells: From single-junction to tandem architecture

4. Area and LCOE considerations in utility-scale, single-axis tracking PV power plant topology optimization

5. The Passivated Emitter and Rear Cell (PERC): From conception to mass production

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