Metalorganic Vapor Phase Epitaxy of GaN, InN, and AlGaN Using 1,1-Dimethylhydrazine as a Nitrogen Source
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference20 articles.
1. MOVPE growth of cubic GaN on GaAs using dimethylhydrazine
2. Surface Morphology and Carbon Incorporation for Hexagonal GaN/(111)B GaAs Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine and Trimethylgallium
3. Pyrolysis of 1,1 dimethylhydrazine for OMVPE growth
4. The Role of Growth Rates and Buffer Layer Structures for Quality Improvement of Cubic GaN Grown on GaAs
5. Pyrolysis of dimethylhydrazine and its co-pyrolysis with triethylgallium
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Metal organic vapour phase epitaxy of AlN, GaN, InN and their alloys: A key chemical technology for advanced device applications;Coordination Chemistry Reviews;2013-07
2. Milliwatt-class non-polar a-plane InGaN/GaN light-emitting diodes grown directly on r-plane sapphire substrates;Current Applied Physics;2010-11
3. Metalorganic vapor phase epitaxy of InN on GaN using tertiary-butylhydrazine as nitrogen source;Journal of Crystal Growth;2010-06
4. Recent advances in the MOVPE growth of indium nitride;physica status solidi (a);2009-12-10
5. MOVPE growth of InN films using 1,1-dimethylhydrazine as a nitrogen precursor;Journal of Crystal Growth;2009-05
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3