Nonvolatile Flash Memory Devices Using CeO2Nanocrystal Trapping Layer for Two-Bit per Cell Applications
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference11 articles.
1. Introduction to flash memory
2. Performance and Reliability Features of Advanced Nonvolatile Memories Based on Discrete Traps (Silicon Nanocrystals, SONOS)
3. Over-Erase Phenomenon in SONOS-Type Flash Memory and its Minimization Using a Hafnium Oxide Charge Storage Layer
4. Band diagram and carrier conduction mechanisms in ZrO/sub 2/ MIS structures
5. A physical model for the hysteresis phenomenon of the ultrathin ZrO2 film
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2. Self-Assembled Sn Nanocrystals as the Floating Gate of Nonvolatile Flash Memory;ACS Applied Electronic Materials;2019-08-26
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