Self-Assembled Sn Nanocrystals as the Floating Gate of Nonvolatile Flash Memory-Reference-Cited by-同舟云学术

Self-Assembled Sn Nanocrystals as the Floating Gate of Nonvolatile Flash Memory

Published:2019-08-26 Issue:9 Volume:1 Page:1852-1858
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Rathore Jaswant S.¹,Fandan Rajveer²,Srivastava Shalini²,Khiangte Krista R.¹,Das Sudipta¹²,Ganguly Udayan²,Laha Apurba²^ORCID,Mahapatra Suddhasatta¹^ORCID

Affiliation:

1. Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076, India

2. Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India

Funder

Science and Engineering Research Board

Ministry of Human Resource Development

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00379

Reference44 articles.

1. A Floating Gate and Its Application to Memory Devices

2. Progress in non-volatile memory devices based on nanostructured materials and nanofabrication

3. Developments in nanocrystal memory

4. Review paper: Nano-floating gate memory devices

5. NROM: A novel localized trapping, 2-bit nonvolatile memory cell

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