Activation of p-Type Dopants in 4H–SiC Using Hybrid Super-Rapid Thermal Annealing Equipment-Reference-Cited by-同舟云学术

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Activation of p-Type Dopants in 4H–SiC Using Hybrid Super-Rapid Thermal Annealing Equipment

Published:2007-08-06 Issue:8A Volume:46 Page:5342-5344
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kinoshita Akimasa,Suzuki Kenji,Senzaki Junji,Katou Makoto,Harada Shinsuke,Okamato Mitsuo,Nishizawa Shin-ichi,Fukuda Kenji,Morigasa Fukuyoshi,Endou Tomoyoshi,Isii Takuo,Yashima Teruyuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference10 articles.

1. Influences of postimplantation annealing conditions on resistance lowering in high-phosphorus-implanted 4H–SiC

2. Electrical activation of implanted phosphorus ions in [0001]- and [11–20]-oriented 4H-SiC

3. High temperature high-dose implantation of aluminum in 4H-SiC

4. Electrical Characteristics of Al⁺ Ion-Implanted 4H-SiC

5. Ion-implantation in bulk semi-insulating 4H–SiC

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Surface Orientation and Off-Angle on Surface Roughness and Electrical Properties of p-Type Impurity Implanted 4H-SiC Substrate after High Temperature Annealing;Materials Science Forum;2006-10

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