Si(001) Surface Layer-by-Layer Oxidation Studied by Real-Time Photoelectron Spectroscopy using Synchrotron Radiation-Reference-Cited by-同舟云学术

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Si(001) Surface Layer-by-Layer Oxidation Studied by Real-Time Photoelectron Spectroscopy using Synchrotron Radiation

Published:2007-05-17 Issue:5B Volume:46 Page:3244-3254
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ogawa Shuichi,Yoshigoe Akitaka,Ishidzuka Shinji,Teraoka Yuden,Takakuwa Yuji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference69 articles.

1. The surface science of semiconductor processing: gate oxides in the ever-shrinking transistor

2. Layer-resolved kinetics of Si oxidation investigated using the reflectance difference oscillation method

3. General Relationship for the Thermal Oxidation of Silicon

4. Phenomenological Theory on Si Layer-by-Layer Oxidation with Small Interfacial Islands

5. In situ stress measurements during thermal oxidation of silicon

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